2SA1943 Bipolar Transistors PNP - BJT POWER TRANSISTOR PC=150W; F=30MHZ

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Manufacturer:

Toshiba

 

Product Category:

Bipolar Transistors - BJT

 

RoHS:

 Details

 

 

Mounting Style:

Through Hole

 

Package/Case:

TO-3P-3

 

Transistor Polarity:

PNP

 

Configuration:

Single

 

Collector- Emitter Voltage VCEO Max:

230 V

 

Collector- Base Voltage VCBO:

230 V

 

Emitter- Base Voltage VEBO:

5 V

 

Maximum DC Collector Current:

15 A

 

Gain Bandwidth Product fT:

30 MHz

 

Minimum Operating Temperature:

- 55 C

 

Maximum Operating Temperature:

+ 150 C

 

Series:

2SA1943

 

Height:

26 mm

 

 

Length:

20.5 mm (Max)

 

 

Width:

5.2 mm (Max)

 

 

Brand:

Toshiba

 

 

DC Collector/Base Gain hFE Min:

80

 

 

Pd - Power Dissipation:

150000 mW

 

 

Product Type:

BJTs - Bipolar Transistors

 

 

Factory Pack Quantity:

100

 

 

Subcategory:

Transistors

 

 

Unit Weight:

6,756 g