Транзистор BLF610LS-260PR

Транзистор BLF610LS-260PRBLF6G10L-260PRN; BLF6G10LS-260PRNPower LDMOS transistorRev. 1 12 August 2010 Product data sheet1. Product profile1.1 General description260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc)2-carrier W-CDMA 920 to 960 28 40 22.0 26.5 -39[1][1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an I