IRGP50B60PD1PBF 1шт---100грн--3.01-упаковка №4
- Type of Transistor: MOSFET
- Type Designator: PHP54N06T
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 55 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 54 A
- Drain-Source Capacitance: 290 pF
- Maximum Operating Junction Temperature: 175 °C
- Rise Time: 74 nS
- Maximum Drain-Source On-State Resistance: 0.02 Ohm
- Maximum Power Dissipation: 118 W
- Package: TO-220AB
Транзистор SPP20N60S5----1шт---85грн ---17.07---коробка №4